ANAPF有源電力濾波器

1、ANAPF產品介紹(shao)

2、外觀尺寸

3、技術參數

4、接線示意

5、諧波電流的估算

      絕緣柵場效應晶體管(IGBT)作為一種復合型器件,集成了mosFET的電壓驅動和高開關頻率及功率管低損耗、大功率的特點,在電機控制、開關電源、變流裝置及許多要求快速、低損耗的領域中有著廣泛的應用。本文對應用于有源電力濾波器的(de)(de)(de)IGBT的(de)(de)(de)特(te)性及其專有(you)EXB84l型驅(qu)動器(qi)的(de)(de)(de)設計(ji)進行(xing)討(tao)論,并提出一種具有(you)完善保(bao)護功能的(de)(de)(de)驅(qu)動電(dian)路。

　　有源電力濾波器設計(ji)中應用4個IGBT作為開(kai)關,并用4個EXB84l組成驅(qu)動(dong)電路(lu)(lu),其原理如圖l所示。在實驗中,根據補償電流與指令(ling)電流的關系,用數字信(xin)號處理器(qi)(DSP)控制(zhi)PWM引(yin)腳的高低電平,并由驅(qu)動(dong)電路(lu)(lu)控制(zhi)IGBT的通斷。驅(qu)動(dong)電路(lu)(lu)同(tong)時對過流故障進行監測,由DSP采取控制(zhi)信(xin)號、停機等處理。

圖1 有源電力濾波器的IGBT驅動電路(lu)原理(li)

1 驅(qu)動電路的設計

1.1 驅動電路(lu)電源(yuan)

　　驅動(dong)電(dian)路(lu)需要(yao)4路(lu)相互隔離的(de)直(zhi)流(liu)(liu)電(dian)源(yuan)為4路(lu)IGBT驅動(dong)電(dian)路(lu)供電(dian),用220V/22V變壓器(qi)(qi)對(dui)4路(lu)交流(liu)(liu)電(dian)源(yuan)分別整流(liu)(liu),用電(dian)容(rong)器(qi)(qi)和(he)78L24型電(dian)壓調(diao)整器(qi)(qi)穩(wen)壓后輸出4路(lu)24V直(zhi)流(liu)(liu)電(dian)壓,如圖2所(suo)示。

圖2 IGBT驅動電路的電源設計

1.2 柵極電壓

　　IGBT通(tong)(tong)常采用柵(zha)(zha)極(ji)電壓(ya)驅動(dong)(dong)(dong)(dong),它對柵(zha)(zha)極(ji)驅動(dong)(dong)(dong)(dong)電路(lu)有著(zhu)特殊的(de)要求。柵(zha)(zha)極(ji)驅動(dong)(dong)(dong)(dong)電壓(ya)脈沖(chong)的(de)上升(sheng)率和(he)下降(jiang)率要足夠大,導通(tong)(tong)時(shi)(shi),前沿(yan)很陡(dou)的(de)柵(zha)(zha)極(ji)電壓(ya)UGE可(ke)以使(shi)IGBT快(kuai)速(su)導通(tong)(tong),并(bing)(bing)減(jian)小(xiao)導通(tong)(tong)損耗(hao),關(guan)斷(duan)時(shi)(shi),其柵(zha)(zha)極(ji)驅動(dong)(dong)(dong)(dong)電路(lu)要給IGBT提(ti)供一個(ge)下降(jiang)很陡(dou)的(de)關(guan)斷(duan)電壓(ya),并(bing)(bing)在柵(zha)(zha)極(ji)和(he)發射極(ji)之間(jian)施加一個(ge)適當的(de)反向(xiang)負偏壓(ya),以便(bian)使(shi)IGBT快(kuai)速(su)關(guan)斷(duan),并(bing)(bing)減(jian)小(xiao)關(guan)斷(duan)損耗(hao)。IGBT導通(tong)(tong)后,柵(zha)(zha)極(ji)的(de)驅動(dong)(dong)(dong)(dong)電壓(ya)和(he)電流要有足夠的(de)寬度,以保(bao)證IGBT在瞬時(shi)(shi)過載時(shi)(shi)未退出飽(bao)(bao)和(he)區受到損壞(huai)。柵(zha)(zha)極(ji)驅動(dong)(dong)(dong)(dong)電壓(ya)值為15 V±1.5 V,這個(ge)電壓(ya)值使(shi)IGBT*飽(bao)(bao)和(he)導通(tong)(tong),并(bing)(bing)使(shi)通(tong)(tong)態損耗(hao)減(jian)至小(xiao)。施加關(guan)斷(duan)負偏壓(ya)可(ke)以抑制C-E間(jian)出現du/dt時(shi)(shi)IGBT的(de)誤導通(tong)(tong),也可(ke)以減(jian)少關(guan)斷(duan)損耗(hao)。

1.3 門極電阻R1

　　門極電(dian)(dian)阻R1的(de)(de)選(xuan)取對通(tong)(tong)(tong)態電(dian)(dian)壓(ya)、開關(guan)(guan)時(shi)間、開關(guan)(guan)損(sun)耗(hao)及承(cheng)受短路的(de)(de)能(neng)力(li)都有(you)不(bu)同程度的(de)(de)影響。當(dang)門極電(dian)(dian)阻增大時(shi),IGBT的(de)(de)開通(tong)(tong)(tong)和(he)關(guan)(guan)斷(duan)時(shi)間增加,從而使導通(tong)(tong)(tong)和(he)關(guan)(guan)斷(duan)損(sun)耗(hao)增加。當(dang)門極電(dian)(dian)阻減(jian)小時(shi),則會(hui)導致di/dt增加,從而引(yin)起IGBT的(de)(de)誤導通(tong)(tong)(tong)。所以應(ying)根據IGBT的(de)(de)電(dian)(dian)流(liu)容量和(he)電(dian)(dian)壓(ya)額定值(zhi)以及開關(guan)(guan)頻率的(de)(de)不(bu)同選(xuan)擇(ze)R1的(de)(de)阻值(zhi)。

　　Rl的值(zhi)可以用下式計算：

　　IC為(wei)IGBT的(de)集電(dian)(dian)(dian)極電(dian)(dian)(dian)流(liu)。如圖(tu)3所示,一(yi)般R1取十幾(ji)歐姆到幾(ji)十歐姆,R2為(wei)30 Ω。由于IGBT是(shi)壓(ya)(ya)控器(qi)(qi)件(jian),當集-射極間加高壓(ya)(ya)時,很(hen)容易受(shou)外界干擾,而使柵-射極間電(dian)(dian)(dian)壓(ya)(ya)超(chao)過一(yi)定(ding)值(zhi),引起器(qi)(qi)件(jian)誤導通,為(wei)了防止這種現象的(de)發生,在柵-射極間并聯一(yi)電(dian)(dian)(dian)阻器(qi)(qi)R6可起到一(yi)定(ding)作用。一(yi)般R6阻值(zhi)是(shi)R2阻值(zhi)的(de)l 000~5 000倍,而且應(ying)將它并聯在柵-射極近處。電(dian)(dian)(dian)路中的(de)電(dian)(dian)(dian)容器(qi)(qi)Cl和C2用來(lai)抑(yi)制因電(dian)(dian)(dian)源(yuan)接線阻抗引起的(de)供電(dian)(dian)(dian)電(dian)(dian)(dian)壓(ya)(ya)變化,而不是(shi)用于電(dian)(dian)(dian)源(yuan)濾波。

1.4 EXB841驅動(dong)環節

　　筆(bi)者在實驗中采用的是(shi)EXB841型IGBT驅(qu)動(dong)模塊,其(qi)高運行(xing)頻率為(wei)(wei)(wei)40 kHz,輸入信號經內(nei)部光耦隔(ge)離(li),光隔(ge)驅(qu)動(dong)電(dian)(dian)流為(wei)(wei)(wei)10 mA,大延時約為(wei)(wei)(wei)1 μs。工作溫度范(fan)圍(wei)為(wei)(wei)(wei)-10℃~+85℃,供電(dian)(dian)電(dian)(dian)壓為(wei)(wei)(wei)+20 V～+25 V。筆(bi)者對EXB841功能進行(xing)了擴(kuo)展,圖(tu)3為(wei)(wei)(wei)驅(qu)動(dong)環節電(dian)(dian)路(lu)。

圖3 有源電力濾波器的IGBT驅動電(dian)路圖

　　EXB841的(de)6引(yin)腳連接(jie)的(de)二極(ji)管可(ke)檢測(ce)IGBT的(de)飽和壓降(jiang),用來完(wan)成過(guo)流(liu)保(bao)(bao)(bao)(bao)(bao)護(hu)功(gong)能(neng),4引(yin)腳的(de)過(guo)流(liu)保(bao)(bao)(bao)(bao)(bao)護(hu)信號(hao)延(yan)時(shi)10μs輸出。當IGBT有過(guo)流(liu)時(shi),若UCE大于(yu)7.5V,內部(bu)過(guo)流(liu)保(bao)(bao)(bao)(bao)(bao)護(hu)電路(lu)開始(shi)動作(zuo)(zuo),軟(ruan)關(guan)斷IG-BT。通常在IGBT通過(guo)額(e)定電流(liu)時(shi)UCE為(wei)3.5 V,當UCE=7.5 V時(shi),IGBT有過(guo)流(liu),其值約為(wei)額(e)定電流(liu)的(de)3~5倍,但是(shi)由于(yu)沒有達(da)到保(bao)(bao)(bao)(bao)(bao)護(hu)的(de)閾值,保(bao)(bao)(bao)(bao)(bao)護(hu)電路(lu)不起作(zuo)(zuo)用。如果長時(shi)間(jian)工作(zuo)(zuo)在這種狀(zhuang)態,則(ze)會導致IGBT損壞。為(wei)了可(ke)靠地(di)保(bao)(bao)(bao)(bao)(bao)護(hu)IGBT,應該(gai)降(jiang)低(di)過(guo)流(liu)保(bao)(bao)(bao)(bao)(bao)護(hu)閾值,可(ke)以在D1與(yu)(yu)IGBT的(de)集電極(ji)間(jian)反(fan)串一個(ge)穩(wen)壓管,或多串幾(ji)個(ge)與(yu)(yu)D1同規格的(de)快速(su)恢復二極(ji)管。如圖3通過(guo)反(fan)串一個(ge)IN4728型3.3 V穩(wen)壓管使(shi)保(bao)(bao)(bao)(bao)(bao)護(hu)閾值降(jiang)為(wei)4.2V。當檢測(ce)到IGBT過(guo)流(liu)后(hou),5引(yin)腳變(bian)為(wei)低(di)電平(ping),TPL521型光耦(ou)輸出低(di)電平(ping),通過(guo)與(yu)(yu)門(men)控(kong)制(zhi)信號(hao)輸入,同時(shi)使(shi)4輸入與(yu)(yu)非門(men)輸出低(di)電平(ping),觸發功(gong)率(lv)驅動保(bao)(bao)(bao)(bao)(bao)護(hu)中(zhong)斷,完(wan)成相應的(de)保(bao)(bao)(bao)(bao)(bao)護(hu)處(chu)理。

1.5 控制部分與驅動部分的隔離

　　控(kong)制(zhi)電(dian)(dian)路(lu)(lu)為弱電(dian)(dian)部(bu)分,極易(yi)受到干(gan)(gan)擾;驅動電(dian)(dian)路(lu)(lu)直接與外電(dian)(dian)路(lu)(lu)連(lian)接,是一個(ge)較強的干(gan)(gan)擾源(yuan);為了實現整(zheng)個(ge)設備的電(dian)(dian)磁兼容,控(kong)制(zhi)電(dian)(dian)路(lu)(lu)部(bu)分必須與驅動部(bu)分隔離。為了避免公共電(dian)(dian)源(yuan)對(dui)控(kong)制(zhi)電(dian)(dian)路(lu)(lu)產生(sheng)干(gan)(gan)擾,應對(dui)控(kong)制(zhi)電(dian)(dian)路(lu)(lu)及驅動電(dian)(dian)路(lu)(lu)分別供電(dian)(dian),EXB84l的電(dian)(dian)源(yuan)電(dian)(dian)壓(ya)為+20 V,一般控(kong)制(zhi)電(dian)(dian)路(lu)(lu)的供電(dian)(dian)電(dian)(dian)壓(ya)為5 V,因此,可以利(li)用(yong)圖4所示的DC-DC微(wei)(wei)功(gong)率模(mo)(mo)塊進行電(dian)(dian)源(yuan)隔離,采用(yong)A2405D型微(wei)(wei)功(gong)率模(mo)(mo)塊實現電(dian)(dian)源(yuan)的隔離。

2 IGBT及驅動電路的保(bao)護

2.1 IGBT的過電壓保護

　　IGBT集-射極(ji)(ji)之間(jian)的(de)(de)(de)(de)(de)(de)瞬(shun)時過(guo)壓會對IGBT造成損壞,筆者采用箝位(wei)式(shi)吸收(shou)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路對瞬(shun)時過(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓進行抑制(zhi)。當IGBT導通時,由于二極(ji)(ji)管的(de)(de)(de)(de)(de)(de)作用,電(dian)(dian)(dian)(dian)(dian)(dian)(dian)容器的(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)荷(he)不會被放掉,電(dian)(dian)(dian)(dian)(dian)(dian)(dian)容器電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓仍(reng)為電(dian)(dian)(dian)(dian)(dian)(dian)(dian)源電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓。IGBT關斷時,負載電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流仍(reng)流過(guo)IGBT,直到IGBT集-射極(ji)(ji)之間(jian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓達(da)到電(dian)(dian)(dian)(dian)(dian)(dian)(dian)源電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓,續流二極(ji)(ji)管導通。應(ying)用該電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路,可以使(shi)雜散電(dian)(dian)(dian)(dian)(dian)(dian)(dian)感中的(de)(de)(de)(de)(de)(de)能(neng)量通過(guo)二極(ji)(ji)管轉儲到吸收(shou)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)容器中,而(er)IGBT的(de)(de)(de)(de)(de)(de)集電(dian)(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)位(wei)被箝位(wei)在電(dian)(dian)(dian)(dian)(dian)(dian)(dian)容電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓上,這樣就可以抑制(zhi)IGBT集電(dian)(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)的(de)(de)(de)(de)(de)(de)尖峰電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓。吸收(shou)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)容器的(de)(de)(de)(de)(de)(de)容值(zhi)可以按公式(shi)(2)選取：

　　式中,L是引線電(dian)感;i是IGBT關斷時(shi)的(de)電(dian)流;△U是吸收電(dian)容器上(shang)的(de)電(dian)壓(ya)過沖(chong)。

　　當(dang)吸(xi)收(shou)回路(lu)中的(de)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)器(qi)電(dian)(dian)(dian)(dian)(dian)壓(ya)高(gao)于直流側電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)器(qi)上(shang)(shang)的(de)電(dian)(dian)(dian)(dian)(dian)壓(ya)時,通(tong)過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)阻(zu)器(qi)向直流側電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)器(qi)回送(song)能(neng)(neng)量(liang),一直到(dao)與直流側電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)器(qi)的(de)電(dian)(dian)(dian)(dian)(dian)壓(ya)相(xiang)(xiang)等。當(dang)IGBT關斷時,線路(lu)電(dian)(dian)(dian)(dian)(dian)感(gan)在集電(dian)(dian)(dian)(dian)(dian)極和發射極二端產生很高(gao)的(de)尖峰電(dian)(dian)(dian)(dian)(dian)壓(ya),加上(shang)(shang)箝位(wei)式(shi)吸(xi)收(shou)電(dian)(dian)(dian)(dian)(dian)路(lu)以后,UCE被(bei)箝位(wei)在電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)器(qi)電(dian)(dian)(dian)(dian)(dian)壓(ya)上(shang)(shang),當(dang)UCE高(gao)于電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)器(qi)電(dian)(dian)(dian)(dian)(dian)壓(ya)時,線路(lu)電(dian)(dian)(dian)(dian)(dian)感(gan)的(de)能(neng)(neng)量(liang)被(bei)轉移(yi)到(dao)吸(xi)收(shou)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)器(qi)上(shang)(shang),當(dang)尖峰電(dian)(dian)(dian)(dian)(dian)壓(ya)過(guo)(guo)去以后,吸(xi)收(shou)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)高(gao)于主(zhu)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)的(de)那部分電(dian)(dian)(dian)(dian)(dian)壓(ya)會由于能(neng)(neng)量(liang)回進而達到(dao)與主(zhu)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)相(xiang)(xiang)等。這樣就(jiu)抑制了(le)集-射極間的(de)尖峰電(dian)(dian)(dian)(dian)(dian)壓(ya)。吸(xi)收(shou)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)越(yue)(yue)大,吸(xi)收(shou)效果(guo)越(yue)(yue)好。由于吸(xi)收(shou)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)器(qi)上(shang)(shang)過(guo)(guo)沖的(de)能(neng)(neng)量(liang)大部分被(bei)送(song)回到(dao)直流側電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong),所以減(jian)小(xiao)了(le)電(dian)(dian)(dian)(dian)(dian)阻(zu)器(qi)的(de)功(gong)耗。

2.2 消除(chu)IGBT集-柵極之間(jian)的du/dt

　　圖(tu)5所示為EXB841與IGBT柵-射(she)極(ji)(ji)(ji)之(zhi)(zhi)(zhi)間的(de)連(lian)接電(dian)路原(yuan)理(li)圖(tu)。當驅動電(dian)路中的(de)V4導通時,IGBT處(chu)于(yu)(yu)正常導通狀態,當V5導通時,IGBT柵-射(she)極(ji)(ji)(ji)之(zhi)(zhi)(zhi)間通過(guo)穩壓(ya)(ya)管(guan)VZ2提供一(yi)個-5V電(dian)壓(ya)(ya)加在(zai)其(qi)兩端,使IGBT關斷,此(ci)時V5處(chu)于(yu)(yu)臨界導通狀態,穩壓(ya)(ya)管(guan)VZ2處(chu)于(yu)(yu)反向偏置狀態。但由于(yu)(yu)集(ji)-柵極(ji)(ji)(ji)之(zhi)(zhi)(zhi)間分(fen)布電(dian)容的(de)影響,集(ji)-柵極(ji)(ji)(ji)之(zhi)(zhi)(zhi)間的(de)du/dt增大時,其(qi)通過(guo)分(fen)布電(dian)容形成的(de)電(dian)流(liu)經過(guo),所以,要克服集(ji)-柵極(ji)(ji)(ji)之(zhi)(zhi)(zhi)間的(de)du/dt,確保穩壓(ya)(ya)管(guan)不過(guo)壓(ya)(ya),避免IGBT誤導通。克服du/dt的(de)方法有(you)二(er)種：一(yi)是(shi)驅動電(dian)路輸(shu)出與IGBT柵-射(she)極(ji)(ji)(ji)之(zhi)(zhi)(zhi)間的(de)連(lian)線采(cai)用(yong)雙絞屏蔽電(dian)纜,屏蔽層接地,二(er)是(shi)采(cai)用(yong)快速吸(xi)收(shou)電(dian)路吸(xi)收(shou)過(guo)電(dian)壓(ya)(ya)。

2.3 EXB841的過流(liu)保護功(gong)能(neng)擴展

　　EXB841自身具有過流(liu)保(bao)護(hu)(hu)(hu)功能,其保(bao)護(hu)(hu)(hu)原理是利(li)用(yong)IGBT的(de)集電(dian)極通態飽(bao)和壓(ya)(ya)降與集電(dian)極電(dian)流(liu)呈近似線性關(guan)系。當IGBT工作在正常狀(zhuang)態時,EXB841的(de)6腳(jiao)(jiao)電(dian)位(wei)箝制(zhi)在8 V,內部保(bao)護(hu)(hu)(hu)不動(dong)作,當IGBT因(yin)承受(shou)過流(liu)而退出飽(bao)和狀(zhuang)態時,IGBT集-射極間的(de)電(dian)壓(ya)(ya)上升很多,與EXB84l的(de)6引(yin)腳(jiao)(jiao)相連的(de)快速(su)二極管截止(zhi),EXB841的(de)6引(yin)腳(jiao)(jiao)被懸(xuan)空,內部保(bao)護(hu)(hu)(hu)動(dong)作,輸(shu)出驅動(dong)電(dian)壓(ya)(ya)慢慢下降,實現IGBT的(de)軟關(guan)斷(duan)。

　　在(zai)(zai)實(shi)際應用(yong)中(zhong),僅靠EXB841的(de)6引腳檢(jian)測IG-BT集電(dian)極(ji)(ji)電(dian)壓(ya)來(lai)實(shi)現過流(liu)(liu)保護并不(bu)足以有效地保護IGBT,因此(ci)有必(bi)要在(zai)(zai)主電(dian)路(lu)中(zhong)加接霍爾電(dian)流(liu)(liu)傳(chuan)感(gan)器(qi)來(lai)檢(jian)測電(dian)路(lu)中(zhong)的(de)過流(liu)(liu),如(ru)(ru)圖(tu)6所示。過流(liu)(liu)發生后,檢(jian)測電(dian)路(lu)檢(jian)測到電(dian)流(liu)(liu),延時8μs后信號還(huan)存在(zai)(zai)的(de)話。驅動(dong)信號以關斷IGBT。在(zai)(zai)圖(tu)中(zhong),霍爾電(dian)流(liu)(liu)傳(chuan)感(gan)器(qi)如(ru)(ru)果在(zai)(zai)主電(dian)路(lu)中(zhong)檢(jian)測到過流(liu)(liu)信號,其(qi)中(zhong)的(de)PNP三(san)(san)極(ji)(ji)管將導(dao)通(tong),同(tong)時,NPN三(san)(san)極(ji)(ji)管被(bei)(bei)截止(zhi),EXB841的(de)6腳被(bei)(bei)懸空;當沒有過流(liu)(liu)信號時,PNP三(san)(san)極(ji)(ji)管不(bu)導(dao)通(tong),NPN三(san)(san)極(ji)(ji)管導(dao)通(tong),此(ci)時電(dian)路(lu)等(deng)效于擴展(zhan)前的(de)電(dian)路(lu)。

3 結束語

　　本設計應(ying)用(yong)以上電路對IGBT進(jin)行驅(qu)(qu)動(dong)(dong)和(he)保(bao)護。此驅(qu)(qu)動(dong)(dong)電路是(shi)在典型(xing)驅(qu)(qu)動(dong)(dong)電路的(de)基礎(chu)上進(jin)行改進(jin)和(he)完(wan)善的(de),并且自行設計了隔離部(bu)分(fen)和(he)過電流保(bao)護擴展部(bu)分(fen)。此驅(qu)(qu)動(dong)(dong)電路相對簡(jian)單、實用(yong),對被(bei)驅(qu)(qu)動(dong)(dong)的(de)IGBT有(you)完(wan)善的(de)保(bao)護能(neng)力(li),輸(shu)出阻抗低,具(ju)有(you)較強(qiang)的(de)抗干擾(rao)性能(neng)。

　　應用這種(zhong)IGBT模塊(kuai)的有源濾(lv)波器的樣機通過試驗,證明硬件能夠協調配合,控制(zhi)效果穩定、精確,并且已經批量制(zhi)板。